|
Research
Front Name
|
Percentage of corporate affiliations
|
Leading
corporation
|
|
HIGH-SPEED SILICON OPTICAL MODULATOR; 5 GBIT/S
CARRIER-INJECTION-BASED SILICON MICRO-RING SILICON
MODULATORS; FAST ALL-OPTICAL SWITCHING USING
ION-IMPLANTED SILICON PHOTONIC CRYSTAL NANOCAVITIES
View a Research Front Map for this front
titled:
PHOTONIC DEVICES
|
49
|
Intel Corp
|
|
NANOSCALE GERMANIUM MOS DIELECTRICS; THIN GE OXYNITRIDE
GATE DIELECTRIC; GERMANIUM MOS APPLICATIONS-SUBSTRATE
SURFACE PREPARATION; IMPROVED GE SURFACE PASSIVATION
|
35
|
IBM Corp
|
|
HIGH-PERFORMANCE ENHANCEMENT-MODE ALGAN/GAN HEMTS USING
FLUORIDE-BASED PLASMA TREATMENT; ALGAN/GAN HIGH
ELECTRON MOBILITY TRANSISTORS; ALN/GAN INSULATED-GATE
HFETS USING CAT-CVD SIN
|
33
|
Cree Inc
|
|
TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS USING
AMORPHOUS OXIDE SEMICONDUCTORS; ROOM TEMPERATURE
DEPOSITED INDIUM ZINC OXIDE THIN FILM TRANSISTORS; HIGH
MOBILITY TRANSPARENT THIN-FILM TRANSISTORS
|
31
|
Hewlett Packard Corp
|
|
CHEMICALLY AMPLIFIED EXTREME ULTRAVIOLET RESIST;
CHEMICALLY AMPLIFIED ELECTRON BEAM RESIST; ACID
GENERATION EFFICIENCY
|
31
|
IBM Corp
|
|
SOLID OXIDE FUEL CELLS; METALLIC INTERCONNECTS; SOFC
INTERCONNECT APPLICATIONS; SPINEL COATINGS
|
27
|
Chrysalis Technologies Inc
|
|
LIGHT-INDUCED SHAPE-MEMORY POLYMERS; SHAPE-MEMORY
POLYMER NETWORKS; THERMOPLASTIC POLYMERS; SHAPE-MEMORY
EFFECT
|
26
|
GKSS Research Center Geesthacht GmbH
|
|
GAAS PASSIVATION; ATOMIC LAYER-DEPOSITED HIGH-KAPPA
DIELECTRICS; ENHANCEMENT-MODE GAAS N-CHANNEL MOSFET;
AL2O3 GATE DIELECTRICS
|
26
|
Freescale Semiconductor, Inc
|
|
FULLY EPITAXIAL CO/MGO/CO MAGNETIC TUNNEL JUNCTIONS;
MGO BASED MAGNETIC TUNNEL JUNCTIONS; SPUTTERED
COFEB/MGO/COFEB MAGNETIC TUNNEL JUNCTIONS;
SINGLE-CRYSTAL FE/MGO/FE MAGNETIC TUNNEL JUNCTIONS
|
20
|
IBM Corp
|
|
HORIZONTAL PEAK GROUND ACCELERATION; NGA GROUND MOTION
MODEL; PEAK GROUND MOTION; ACCELERATION RESPONSE
SPECTRA
|
20
|
ABS Consulting Inc
|
