|
Research
Front Name
|
Percentage of corporate affiliations
|
Leading
corporation
|
|
264/AVC VIDEO CODING STANDARD; HIGHLY SCALABLE VIDEO
COMPRESSION
|
43
|
Microsoft Corporation
|
|
HIGH-POWER ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON
MOBILITY TRANSISTORS; ALGAN/GAN MIS HFETS; ALN/GAN
INSULATED-GATE HFETS
|
34
|
Cree Incorporated
|
|
HYDROGEN GENERATION UTILIZING ALKALINE SODIUM
BOROHYDRIDE SOLUTION-SUPPORTED COBALT CATALYST;
COMPRESSED HYDROGEN GENERATION USING CHEMICAL HYDRIDE
|
33
|
Toyota Motor Company
|
|
5 GBIT/S CARRIER-INJECTION-BASED SILICON MICRO-RING
SILICON MODULATORS; FAST ALL-OPTICAL SWITCHING USING
ION-IMPLANTED SILICON PHOTONIC CRYSTAL NANOCAVITIES
|
32
|
Intel Corporation
|
|
FULLY EPITAXIAL CO/MGO/CO MAGNETIC TUNNEL JUNCTIONS;
SPUTTERED COFEB/MGO/COFEB MAGNETIC TUNNEL JUNCTIONS
|
32
|
JST
|
|
NANOSCALE GERMANIUM MOS DIELECTRICS; HFO2 HIGH-KAPPA
GATE DIELECTRICS; THIN GE OXYNITRIDE GATE DIELECTRIC
|
32
|
IBM Corporation
|
|
TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS USING
AMORPHOUS OXIDE SEMICONDUCTORS; HIGH MOBILITY
TRANSPARENT THIN-FILM TRANSISTORS
|
30
|
Hewlett Packard Corporation
|
|
LI/LICOO2 CELL USING ROOM TEMPERATURE IONIC LIQUIDS
(RTILS); LOW-VISCOSITY IONIC LIQUIDS
|
23
|
Nisshinbo Industries Incorporated
|
|
CHEMICALLY AMPLIFIED EXTREME ULTRAVIOLET RESIST;
CHEMICALLY AMPLIFIED FULLERENE-DERIVATIVE MOLECUTAR
ELECTRON-BEAM RESIST
|
23
|
IBM Corporation
|
|
NANOSCALE MOSFETS; UNDOPED SYMMETRIC DOUBLE-GATE
MOSFETS; LONG-CHANNEL UNDOPED SURROUNDING GATE MOSFETS
|
21
|
Intel Corporation
|
