|
Research
Front Name
|
Percentage of corporate affiliations
|
Leading
corporation
|
|
5 GBIT/S CARRIER-INJECTION-BASED SILICON MICRO-RING
SILICON MODULATORS; FAST ALL-OPTICAL SWITCHING USING
ION-IMPLANTED SILICON PHOTONIC CRYSTAL NANOCAVITIES
|
43
|
Intel Corp
|
|
264/AVC VIDEO CODING STANDARD; 264/AVC VIDEO
COMPRESSION STANDARD; SCALABLE VIDEO CODING; HIGHLY
SCALABLE VIDEO COMPRESSION
|
40
|
Microsoft Corp
|
|
HIGH-POWER ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON
MOBILITY TRANSISTORS; ALGAN/GAN MIS HFETS; ALN/GAN
INSULATED-GATE HFETS
|
37
|
Cree Inc
|
|
NANOSCALE GERMANIUM MOS DIELECTRICS; THIN GE OXYNITRIDE
GATE DIELECTRIC; GERMANIUM MOS APPLICATIONS-SUBSTRATE
SURFACE PREPARATION
|
35
|
IBM Corp
|
|
FERMI-LEVEL PINNING INDUCED THERMAL INSTABILITY;
ACHIEVING CONDUCTION BAND-EDGE EFFECTIVE WORK
FUNCTIONS; NI FULLY SILICIDED GATES
|
35
|
IBM Corp
|
|
TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS USING
AMORPHOUS OXIDE SEMICONDUCTORS; TRANSPARENT ZNO
THIN-FILM TRANSISTOR FABRICATED
|
34
|
Hewlett-Packard Corp
|
|
GAAS PASSIVATION; ATOMIC LAYER DEPOSITED HIGH-KAPPA
GATE DIELECTRICS; ENHANCEMENT-MODE GAAS N-CHANNEL
MOSFET; AL2O3 GATE DIELECTRICS
|
28
|
Freescale Semiconductor Inc
|
|
LIGHT-INDUCED SHAPE-MEMORY POLYMERS; SHAPE-MEMORY
POLYMER NETWORKS; THERMOPLASTIC POLYMERS
|
26
|
mNemoscience GmbH
|
|
LI/LICOO2 CELL USING ROOM TEMPERATURE IONIC LIQUIDS
(RTILS); LOW-VISCOSITY IONIC LIQUIDS; IONIC LIQUIDS
CONTAINING CARBONATE SOLVENT
|
25
|
Nisshimbo Industries Inc
|
|
CHEMICALLY AMPLIFIED EXTREME ULTRAVIOLET RESIST;
CHEMICALLY AMPLIFIED FULLERENE-DERIVATIVE MOLECUTAR
ELECTRON-BEAM RESIST
|
24
|
IBM Corp
|
