|
Research
Front Name
|
Percentage of corporate affiliations
|
Leading
corporation
|
|
5 GBIT/S CARRIER-INJECTION-BASED SILICON MICRO-RING
SILICON MODULATORS; HIGH-SPEED SILICON OPTICAL
MODULATOR; CONTINUOUS-WAVE RAMAN SILICON LASER
|
40
|
Intel Corp
|
|
HIGH-PERFORMANCE ENHANCEMENT-MODE ALGAN/GAN HEMTS;
FLUORIDE-BASED PLASMA TREATMENT; ALGAN/GAN HIGH
ELECTRON MOBILITY TRANSISTORS
|
31
|
Cree Inc
|
|
AMORPHOUS INDIUM GALLIUM ZINC OXIDE THIN-FILM
TRANSISTORS; TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS
USING AMORPHOUS OXIDE SEMICONDUCTORS
|
30
|
Hewlett Packard Corp
|
|
ATOMIC LAYER DEPOSITED HIGH-KAPPA GATE DIELECTRICS;
GAAS PASSIVATION USING ATOMIC LAYER-DEPOSITED
HIGH-KAPPA DIELECTRICS; NANOSCALE GERMANIUM MOS
DIELECTRICS
|
30
|
IBM Corp
|
|
INGAN/GAN QUANTUM-WELL HETEROSTRUCTURE LIGHT-EMITTING
DIODES; PHOTONIC CRYSTAL STRUCTURES; BLUE-EMITTING
INGAN-GAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODES
|
29
|
Agilent Technologies
|
|
ROOM TEMPERATURE IONIC LIQUIDS; LI/LICOO2 CELL USING
ROOM TEMPERATURE IONIC LIQUIDS (RTILS); LOW-VISCOSITY
IONIC LIQUIDS; IONIC LIQUIDS CONTAINING CARBONATE
SOLVENT
|
24
|
Nisshinbo Industries Inc
|
|
THERMODYNAMICALLY REVERSIBLE HYDROGEN STORAGE
REACTIONS; NEW HYDROGEN STORAGE MATERIALS; ENHANCED
HYDROGEN STORAGE KINETICS
|
22
|
Toyota Industries Corp
|
|
NONPOLAR M-PLANE INGAN/GAN LASER DIODES; HIGH EXTERNAL
EFFICIENCY M-PLANE INGAN LIGHT EMITTING DIODES; HIGH
BRIGHTNESS VIOLET INGAN/GAN LIGHT EMITTING DIODES
|
21
|
Mitsubishi Chemical America Inc
|
|
HYBRID LINEAR ION TRAP/ORBITRAP MASS SPECTROMETER; LTQ
ORBITRAP HYBRID MASS SPECTROMETER; HIGH MASS ACCURACY;
NEW MASS SPECTROMETER
|
20
|
Thermo Electron GmbH
|
|
LOW-RESISTANCE MAGNETIC TUNNEL JUNCTIONS; NANOSCALE
MAGNETIC TUNNEL JUNCTIONS; SPIN-TRANSFER SWITCHING;
MICROWAVE SPIN TORQUE NANO-OSCILLATORS
|
20
|
Hitachi Global Storage Technologies
|
