Label: Kolobov-2004
Title: Understanding the phase-change mechanism of rewritable optical media
Journal: NAT MATER, 3 (10): 703-708 OCT 2004
Citations: 223
Authors: Kolobov, AV;Fons, P;Frenkel, AI;Ankudinov, AL;Tominaga, J;Uruga, T
Addresses:
Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba Cent 4,1-1-1 Higashi, Tsukuba, Ibaraki 3058562, Japan
Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan
Yeshiva Univ, Dept Phys, New York, NY 10016 USA
Univ Washington, Dept Phys, Seattle, WA 98195 USA
Japan Synchrotron Radiat Res Inst, Mikazuki, Hyogo 6795198, Japan
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Label: Lankhorst-2005
Title: Low-cost and nanoscale non-volatile memory concept for future silicon chips
Journal: NAT MATER, 4 (4): 347-352 APR 2005
Citations: 206
Authors: Lankhorst, MHR;Ketelaars, BWSMM;Wolters, RAM
Addresses:
Philips Res Labs, Prof Holstlaan 4, NL-5656 AA Eindhoven, Netherlands
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
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Label: Pirovano-2004
Title: Electronic switching in phase-change memories
Journal: IEEE TRANS ELECTRON DEVICES, 51 (3): 452-459 MAR 2004
Citations: 108
Authors: Pirovano, A;Lacaita, AL;Benvenuti, A;Pellizzer, F;Bez, R
Addresses:
STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy
STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy
Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
Politecn Milan, IFN, CNR Sez Milano, I-20133 Milan, Italy
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Label: Wuttig-2007
Title: Phase-change materials for rewriteable data storage
Journal: NAT MATER, 6 (11): 824-832 NOV 2007
Citations: 101
Authors: Wuttig, M;Yamada, N
Addresses:
Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany
Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany
Matsushita Elect Ind Co Ltd, AV Core Technol Dev Ctr, Osaka 5708501, Japan
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Label: Welnic-2006
Title: Unravelling the interplay of local structure and physical properties in phase-change materials
Journal: NAT MATER, 5 (1): 56-62 JAN 2006
Citations: 89
Authors: Welnic, W;Pamungkas, A;Detemple, R;Steimer, C;Blugel, S;Wuttig, M
Addresses:
Rhein Westfal TH Aachen, Inst Phys IA 1, D-52056 Aachen, Germany
Rhein Westfal TH Aachen, Inst Phys IA 1, D-52056 Aachen, Germany
KFA Julich GmbH, Forschungszentrum, Inst Festkorperforsch, D-52425 Julich, Germany
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Label: Pirovano-2004
Title: Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
Journal: IEEE TRANS ELECTRON DEVICES, 51 (5): 714-719 MAY 2004
Citations: 50
Authors: Pirovano, A;Lacaita, AL;Pellizzer, F;Kostylev, SA;Benvenuti, A;Bez, R
Addresses:
STMicroelect, Cent Res & Dev, I-20041 Milan, Italy
STMicroelect, Cent Res & Dev, I-20041 Milan, Italy
Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
CNR, IFN, I-20133 Milan, Italy
Ovonyx Inc, Rochester Hills, MI 48306 USA
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Label: Hamann-2006
Title: Ultra-high-density phase-change storage and memory
Journal: NAT MATER, 5 (5): 383-387 MAY 2006
Citations: 46
Authors: Hamann, HF;O'Boyle, M;Martin, YC;Rooks, M;Wickramasinghe, K
Addresses:
IBM Corp, Almaden Res Ctr, 650 Harry Rd, San Jose, CA 95120 USA
TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
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Label: Pirovano-2004
Title: Reliability study of phase-change nonvolatile memories
Journal: IEEE TRANS DEVICE MATER RELIA, 4 (3): 422-427 SEP 2004
Citations: 41
Authors: Pirovano, A;Redaelli, A;Pellizzer, F;Ottogalli, F;Tosi, M;Ielmini, D;Lacaita, AL;Bez, R
Addresses:
STMicroelect, Non Volatil Memory Tehcnol Dev, Cent R&D, I-20041 Agrate Brianza, Milano, Italy
STMicroelect, Non Volatil Memory Tehcnol Dev, Cent R&D, I-20041 Agrate Brianza, Milano, Italy
Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
Politecn Milan, IFN, CNR Sez, I-20133 Milan, Italy
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Label: Wuttig-2007
Title: The role of vacancies and local distortions in the design of new phase-change materials
Journal: NAT MATER, 6 (2): 122-U7 FEB 2007
Citations: 40
Authors: Wuttig, M;Lusebrink, D;Wamwangi, D;Welnic, W;Gillessen, M;Dronskowski, R
Addresses:
Rhein Westfal TH Aachen, I Phys Inst IA, D-52056 Aachen, Germany
Rhein Westfal TH Aachen, I Phys Inst IA, D-52056 Aachen, Germany
Rhein Westfal TH Aachen, Inst Anorgan Chem, D-52056 Aachen, Germany
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Label: Hegedus-2008
Title: Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials
Journal: NAT MATER, 7 (5): 399-405 MAY 2008
Citations: 28
Authors: Hegedus, J;Elliott, SR
Addresses:
Univ Cambridge, Dept Chem, Lensfield Rd, Cambridge CB2 1EW, England
Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England
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Label: Yoon-2006
Title: Sb-Se-based phase-change memory device with lower power and higher speed operations
Journal: IEEE ELECTRON DEV LETT, 27 (6): 445-447 JUN 2006
Citations: 25
Authors: Yoon, SM;Lee, NY;Ryu, SO;Choi, KJ;Park, YS;Lee, SY;Yu, BG;Kang, MJ;Choi, SY;Wuttig, M
Addresses:
ETRI, Basic Res Lab, Taejon 305700, South Korea
ETRI, Basic Res Lab, Taejon 305700, South Korea
Yonsei Univ, Sch New Mat Sci & Engn, Seoul 120749, South Korea
Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany
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Label: Akola-2007
Title: Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe
Journal: PHYS REV B, 76 (23): art. no.-235201 DEC 2007
Citations: 21
Authors: Akola, J;Jones, RO
Addresses:
KFA Julich GmbH, Forschungszentrum, Inst Festkorperforsch, Postfach 1913, D-52425 Julich, Germany
KFA Julich GmbH, Forschungszentrum, Inst Festkorperforsch, D-52425 Julich, Germany
Univ Jyvaskyla, Dept Phys, Nanosci Ctr, FI-40014 Jyvaskyla, Finland
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Label: Lencer-2008
Title: A map for phase-change materials
Journal: NAT MATER, 7 (12): 972-977 DEC 2008
Citations: 15
Authors: Lencer, D;Salinga, M;Grabowski, B;Hickel, T;Neugebauer, J;Wuttig, M
Addresses:
Rhein Westfal TH Aachen, Phys Inst IA 1, JARA FIT, D-52056 Aachen, Germany
Rhein Westfal TH Aachen, Phys Inst IA 1, JARA FIT, D-52056 Aachen, Germany
Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
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Label: Shportko-2008
Title: Resonant bonding in crystalline phase-change materials
Journal: NAT MATER, 7 (8): 653-658 AUG 2008
Citations: 14
Authors: Shportko, K;Kremers, S;Woda, M;Lencer, D;Robertson, J;Wuttig, M
Addresses:
Univ Aachen, Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany
Univ Aachen, Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany
Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
Univ Aachen, Rhein Westfal TH Aachen, JARA FIT, D-52056 Aachen, Germany
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Label: Raoux-2008
Title: Phase-change random access memory: A scalable technology
Journal: IBM J RES DEVELOP, 52 (4-5): 465-479 JUL-SEP 2008
Citations: 11
Authors: Raoux, S;Burr, GW;Breitwisch, MJ;Rettner, CT;Chen, YC;Shelby, RM;Salinga, M;Krebs, D;Chen, SH;Lung, HL;Lam, CH
Addresses:
IBM Almaden Res Ctr, IBM Qimonda Macronix PCRAM Joint Project, 650 Harry Rd, San Jose, CA 95120 USA
IBM Almaden Res Ctr, IBM Qimonda Macronix PCRAM Joint Project, San Jose, CA 95120 USA
IBM Corp, Thomas J Watson Res Ctr, IBM Qimonda Macronix PCRAM Joint Project, Yorktown Hts, NY 10598 USA
Macronix Int Co Ltd, Emerging Cent Lab, Adv Memory Res Dept ME 130, IBM Qimonda Macronix PCRAM Joint Project, Hsinchu, Taiwan
Rhein Westfal TH Aachen, Phys Inst 1A, Aachen, Germany
IBM Corp, Thomas J Watson Res Ctr, Maacronix Int Co Ltd, IBM Qimonda Macronix PCRAM Joint Project, Yorktown Hts, NY 10598 USA
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Label: Pantazi-2008
Title: Probe-based ultrahigh-density storage technology
Journal: IBM J RES DEVELOP, 52 (4-5): 493-511 JUL-SEP 2008
Citations: 8
Authors: Pantazi, A;Sebastian, A;Antonakopoulos, TA;Baechtold, P;Bonaccio, AR;Bonan, J;Cherubini, G;Despont, M;DiPietro, RA;Drechsler, U;Durig, U;Gotsmann, B;Haberle, W;Hagleitner, C;Hedrick, JL;Jubin, D;Knoll, A;Lantz, MA;Pentaralkis, J;Pozidis, H;Pratt, RC;Rothuizen, H;Stutz, R;Varsamou, M;Wiesmann, D;Eleftheriou, E
Addresses:
IBM Corp, Div Res, Zurich Res Lab, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
Univ Patras, Dept Elect & Comp Engn, Rion 26500, Greece
IBM Syst & Technol Grp, Essex Jct, VT 05452 USA
IBM Abnaden Res Ctr, Div Res, San Jose, CA 95120 USA
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Label: Raoux-2008
Title: Phase change materials and their application to random access memory technology
Journal: MICROELECTRON ENG, 85 (12): 2330-2333 DEC 2008
Citations: 6
Authors: Raoux, S;Shelby, RM;Jordan-Sweet, J;Munoz, B;Salinga, M;Chen, YC;Shih, YH;Lai, EK;Lee, MH
Addresses:
IBM Almaden Res Ctr, Macronix PCRAM Joint Project, 650 Harry Rd, San Jose, CA 95120 USA
IBM Almaden Res Ctr, Macronix PCRAM Joint Project, San Jose, CA 95120 USA
IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA
Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany
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KEYWORDS: GE-SB-TE PHASE-CHANGE MEMORY MATERIALS;
PHASE-CHANGE RANDOM ACCESS MEMORY; CRYSTALLINE PHASE-CHANGE MATERIALS; NEW
PHASE-CHANGE MATERIALS; PHASE-CHANGE MATERIALS GE2SB2TE5.
[FRONT NUMBER: 6322 (2003-2009_5) (ENG/mat-sci: crf, mar 2010)]
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