|
Research
Front Name
|
Percentage of corporate affiliations
|
Leading
corporation
|
|
ATOMIC LAYER DEPOSITED HIGH-KAPPA GATE DIELECTRICS;
AL2O3 GATE DIELECTRICS; NANOSCALE GERMANIUM MOS
DIELECTRICS; HFO2 GATE DIELECTRICS
|
31
|
IBM Corp
|
|
HIGH-PERFORMANCE ENHANCEMENT-MODE ALGAN/GAN HEMTS;
ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH
BREAKDOWN VOLTAGE ALGAN-GAN POWER-HEMT DESIGN
|
31
|
Cree, Inc
|
|
TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS; AMORPHOUS
OXIDE SEMICONDUCTORS; AMORPHOUS INDIUM GALLIUM ZINC
OXIDE THIN-FILM TRANSISTORS
|
31
|
Hewlett-Packard Corp
|
|
HIGH-SPEED SILICON OPTICAL MODULATOR; 5 GBIT/S
CARRIER-INJECTION-BASED SILICON MICRO-RING SILICON
MODULATORS; SILICON PHOTONIC CHIP; SILICON CHANNEL
WAVEGUIDES
|
30
|
Intel Corp
|
|
HYDROGEN STORAGE REACTIONS; ENHANCED HYDROGEN STORAGE
KINETICS; NEW HYDROGEN STORAGE MATERIALS; UNSOLVATED
MAGNESIUM BOROHYDRIDE
|
30
|
Toyota Industries Corp
|
|
GE-SB-TE PHASE-CHANGE MEMORY MATERIALS; PHASE-CHANGE
RANDOM ACCESS MEMORY; CRYSTALLINE PHASE-CHANGE
MATERIALS
View Research Front Map for this
front:
"
PHASE CHANGE MEMORY MATERIALS"
|
21
|
Philips Electronics Corp
|
|
PHOTONIC CRYSTAL WAVEGUIDES; PHOTONIC CRYSTALS
FEATURING SPATIAL PULSE COMPRESSION; SILICON PHOTONIC
CRYSTALS; FLAT BAND SLOW LIGHT
|
21
|
IBM Corp
|
|
FULLY INTEGRATED 24-GHZ EIGHT-ELEMENT PHASED-ARRAY
RECEIVER; 60-GHZ CMOS RECEIVER FRONT-END;
MILLIMETER-WAVE CMOS DESIGN
|
20
|
IBM Corp
|
|
LOW-RESISTANCE MAGNETIC TUNNEL JUNCTIONS; NANOSCALE
MAGNETIC TUNNEL JUNCTIONS; SPIN-TRANSFER TORQUE;
DOUBLE-POINT-CONTACT SPIN-TRANSFER DEVICES
|
20
|
Hitachi Global Storage Technologies
|
|
LIGHT-INDUCED SHAPE-MEMORY POLYMERS; INDUCTIVELY HEATED
SHAPE MEMORY POLYMER; SHAPE-MEMORY POLYMER NETWORKS;
THERMOPLASTIC POLYMERS
|
20
|
mNemoscience GmbH
|
