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Peide D.Ye talks with
ScienceWatch.com and answers a few questions about
this month's New Hot Paper in the field of
Engineering.
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“Atomic layer
deposition (ALD)
system.”
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Article Title: Submicrometer inversion-type
enhancement-mode InGaAs MOSFET with atomic-layer-deposited
Al2O3 as gate dielectric
Authors: Xuan, Y;Wu, YQ;Lin, HC;Shen,
T;Ye,
PD
Journal: IEEE ELECTRON DEV LETT
Volume: 28
Issue: 11
Page: 935-938
Year: NOV 2007
* Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN
47907 USA.
* Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN
47907 USA.
(addresses have been truncated)
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Why do you think your paper is highly
cited?
While the community is struggling to have high drive current in III-V
MOSFETs (metal–oxide–semiconductor field-effect transistors),
this paper demonstrates the pathway using a high-k/InGaAs material system.
Does it describe a new discovery, methodology, or
synthesis of knowledge?
It uncovers a new MOS material system with high-k as oxide and InGaAs as
channel material.
Would you summarize the significance of your paper
in layman's terms?
It provides a path to the realization of high-performance III-V MOSFET for
post Si-CMOS applications. There are still many technical challenges needed
to be overcome before it becomes a really manufacturable technology.
How did you become involved in this research, and
were there any problems along the way?
I was hired by Bell Labs/Agere Systems to work on this problem. I have
continued my research in this field after becoming a faculty member at
Purdue University.
Where do you see your research leading in the
future?
This research became quite important since the Si industry is heading
toward the physical limitations of scaling. We have to use high-mobility
channel materials such as III-V, in order to maintain dimension and
performance-scaling.
Do you foresee any social or political implications
for your research?
We have demonstrated the high-performance inversion-type E-mode
In0.53 Ga0.47As MOSFETs using ALD high-? gate
dielectrics. These results suggest that In0.53
Ga0.47As could be an ideal channel material, which has higher
electron effective mobility, low surface recombination velocity to have
enough inversion charge, and wide enough bandgap for the ultimate
complementary metal–oxide–semiconductor (CMOS) applications
with low drain voltage. The potential economic effect is enormous for the
future of this research.
Peide D. Ye, Ph.D.
Birck Nanotechnology Center
School of Electrical and Computer Engineering
Purdue University
West Lafayette, IN, USA
KEYWORDS: FIELD-EFFECT TRANSISTOR; CHANNEL MOSFETS; GAAS
MOSFETS; OXIDE; PASSIVATION; TECHNOLOGY; INSULATOR; MOBILITY;
FILM.
